{"id":92369,"date":"2025-06-24T11:38:31","date_gmt":"2025-06-24T09:38:31","guid":{"rendered":"https:\/\/port.lukasiewicz.gov.pl\/?post_type=projects&p=92369"},"modified":"2026-01-15T15:22:42","modified_gmt":"2026-01-15T14:22:42","slug":"optical-structural-and-electronic-properties-of-iii-v-quantum-dots-on-silicon-qdonsi","status":"publish","type":"projects","link":"https:\/\/port.lukasiewicz.gov.pl\/en\/projekty-badawcze\/optical-structural-and-electronic-properties-of-iii-v-quantum-dots-on-silicon-qdonsi\/","title":{"rendered":"Optical, Structural, and Electronic Properties of III\u2013V Quantum Dots on Silicon \u2013 QDonSi"},"content":{"rendered":"\t\t
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Project funded by the National Science Centre (NCN) under the \u201cOPUS-17<\/strong>\u201d call<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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Project number:<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t

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Project value:<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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\n\t\t\t\t\t\t\t\t\t1,483,800.00 PLN\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t
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Funding amount:<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t

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Project implementation period:<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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\n\t\t\t\t\t\t\t\t\t19\/05\/2020 \u2013 18\/05\/2024\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t
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Project manager:<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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\n\t\t\t\t\t\t\t\t\tProf. Jaros\u0142aw Serafi\u0144czuk\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Consortium partners:<\/p>

Wroc\u0142aw University of Science and Technology<\/strong>
\u0141ukasiewicz Research Network \u2013 PORT Polish Center for Technology Development<\/strong><\/p>

Rapid data transmission and processing underpin today\u2019s information-based society. Most communication now relies on optical channels, where light functions as the information carrier. A global network of optical fibers connects continents, countries, cities, and individual homes.<\/p>

The continuously growing demand for increased processing and data transfer speeds calls for the next technological breakthrough\u2014replacing electrical connections between computers and their subsystems (such as memory buses) with optical connections, or even fully replacing electronic devices with photonic ones, where photons take over the role of electrons as information carriers.<\/p>

Although integrated photonic circuits\u2014key components of photonic devices\u2014are already available, a true technological leap requires a cost-effective solution that supports mass production. This condition can only be met by technologies compatible with CMOS (Complementary Metal-Oxide Semiconductor) silicon-based manufacturing platforms currently used for electronic integrated circuits, such as processors.<\/p>

However, silicon\u2019s inherent material properties pose significant challenges. Its indirect bandgap makes light emission extremely inefficient. As a result, additional semiconductor compounds must be incorporated into devices. Quantum dots made of group III\u2013V elements, such as InAs\/GaAs or InAs\/InP, are considered the most promising candidates. To keep costs low, the fabrication process must be monolithic\u2014avoiding the assembly of separately manufactured components.<\/p>

This requirement introduces further complications. III\u2013V materials have much larger lattice constants than silicon, which introduces strain during growth, leading to low crystallographic quality of heterostructures. Moreover, large differences in thermal expansion coefficients cause cracking during cooling of structures grown at elevated temperatures. Both factors generate numerous defects in III\u2013V quantum dots grown on silicon, significantly reducing their emission efficiency.<\/p>

The research objective of the project is to investigate the material properties of III\u2013V quantum dots on silicon substrates using atomic force microscopy, transmission electron microscopy, and X-ray diffraction to determine structural parameters such as crystallographic quality, defect concentration and types, strain distribution, morphology, and chemical composition.<\/p>

Subsequently, complementary optical spectroscopic techniques will be used to determine their emission properties, focusing in particular on the role of defects. These tools will allow analysis of the dynamics of physical processes occurring in these cutting-edge nanostructures. Experiments will be performed both on ensembles of quantum dots\u2014where the response is averaged over the entire population\u2014and at the single-dot level, where single-photon emission is recorded. This approach is essential for potential quantum communication applications.<\/p>

The obtained results will be compared with theoretical models of the band structure of the studied materials. Quantum dots fabricated using two approaches will be investigated: (i) those grown with intermediate buffer layers and a defect-filtering layer to mitigate strain effects and suppress defect formation in the active region, and (ii) those placed directly within the silicon matrix using a core\u2013shell architecture, where defects accumulate at the shell\u2013silicon interface, leaving the emitting core defect-free.<\/p>

The information gathered throughout the project will help determine whether InAs\/GaAs(InP) quantum dots grown on or embedded in silicon can achieve crystallographic quality and optical properties comparable to III\u2013V quantum dots grown on native substrates\u2014an essential milestone for their future use in integrated photonic circuits.<\/p>

Comprehensive optical and structural characterization carried out during the project will provide extensive insights into the largely unexplored material properties of the investigated quantum dots.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"

Project funded by the National Science Centre (NCN) under the \u201cOPUS-17\u201d call Project number: Project value: Funding amount: Project implementation period: Project manager: Consortium partners: Wroc\u0142aw University of Science and Technology\u0141ukasiewicz Research Network \u2013 PORT Polish Center for Technology Development Rapid data transmission and processing underpin today\u2019s information-based society. Most communication now relies on optical […]<\/p>\n","protected":false},"featured_media":97849,"menu_order":0,"template":"","format":"standard","meta":{"_acf_changed":false,"_seopress_robots_primary_cat":"","_seopress_titles_title":"","_seopress_titles_desc":"","_seopress_robots_index":"","inline_featured_image":false,"footnotes":""},"categories":[727],"grupy_badawcze":[620],"pozostale_projekty":[],"class_list":["post-92369","projects","type-projects","status-publish","format-standard","has-post-thumbnail","hentry","category-finished","grupy_badawcze-grupa-badawcza-epitaksji-zwiazkow-polprzewodnikowych"],"acf":{"kierownik_projektu":["Prof. Jaros\u0142aw Serafi\u0144czuk"],"dofinansowanie":"Narodowe Centrum Nauki","grupa_badawcza":["Advanced Semiconductor Epitaxy Research Group"],"nazwa_projektu":"1,483,800.00 PLN","tematyka_projektu":"19\/05\/2020 \u2013 18\/05\/2024","opis_projektu":"","dofinanowanie":"National Science Centre","nr_projektu":"UMO-2019\/33\/B\/ST5\/02941","wartosc_dofinansowania":"325,200.00 PLN"},"publishpress_future_action":{"enabled":false,"date":"2026-04-30 19:47:09","action":"category","newStatus":"draft","terms":[],"taxonomy":"category","extraData":[]},"publishpress_future_workflow_manual_trigger":{"enabledWorkflows":[]},"_links":{"self":[{"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/projects\/92369","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/projects"}],"about":[{"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/types\/projects"}],"version-history":[{"count":5,"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/projects\/92369\/revisions"}],"predecessor-version":[{"id":97901,"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/projects\/92369\/revisions\/97901"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/media\/97849"}],"wp:attachment":[{"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/media?parent=92369"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/categories?post=92369"},{"taxonomy":"grupy_badawcze","embeddable":true,"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/grupy_badawcze?post=92369"},{"taxonomy":"pozostale_projekty","embeddable":true,"href":"https:\/\/port.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/pozostale_projekty?post=92369"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}