Targeted grant awarded to institutions operating within the Łukasiewicz Research Network
Contract No.: 1/Ł-IMiF/CŁ/2023
Project value: PLN 7,628,985.75
Funding amount: PLN 6,671,588.25
Funding for Łukasiewicz – PORT: PLN 1,572,500.75
Project duration: 01/02/2023 – 31/12/2025
Project Manager: Prof. Robert Kudrawiec
The goal of the project is to introduce a Polish-made GaN HEMT (High Electron Mobility Transistor) with 650V and 1200V ratings to the market for use in high-power industrial power electronics systems. This solution will provide the Polish industry with the opportunity to integrate innovative domestic technological solutions into its own electronic products and applications, thereby enhancing the competitiveness of Polish enterprises on the European and global markets.
To achieve this goal, a high-voltage GaN HEMT transistor technology will be developed at Łukasiewicz – IMiF, verified and consulted with ITRI, and manufactured by UMC.
The 650V technology is currently at TRL 6 and will reach TRL 9 by the project’s completion.
Technologies for other voltage classes (100V, 200V, 750V, 950V, and 1200V) are at TRL 3, but progress toward higher readiness levels is expected to be rapid, given that these will be scaled versions of the developed 650V technology.
1200V and 900V transistors are currently not available on either the local or global market, making them the primary targets of the project. Once developed, the new architecture will be scaled down to lower voltage levels.
The project also includes the development of a GaN HEMT transistor technology platform on silicon substrates, based on original in-house research. The key and proprietary parts of the technology will be protected through patent applications, some of which are already under review to secure intellectual property rights for the innovative GaN HEMT transistor solutions.
Łukasiewicz – IMiF possesses unique know-how in GaN HEMT transistor design and fabrication, including critical technological operations such as gate region formation for normally-off transistors and thermally stable, planar device isolation achieved through ion implantation.
While 650V and lower-voltage transistors are already available on the market, the technology developed by Łukasiewicz – IMiF will offer distinct advantages and novel design features, ensuring intellectual property protection and a competitive technological edge.
