Project

Gallium Nitride Alloys Diluted with Arsenic and Containing High As Concentrations Grown by Metalorganic Vapor Phase Epitaxy – ASMOVPE

Project funded by the National Science Centre (NCN) under the “PRELUDIUM 21” competition

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Project number: 2022/45/N/ST5/03912
Project value: 209,230.00 PLN
Funding amount: 209,230.00 PLN
Project duration: 03/02/2023 – 02/02/2026
Project manager: Wojciech Olszewski

Project implemented by:
Łukasiewicz Research Network – PORT Polish Center for Technology Development

As part of the PRELUDIUM 21 project titled “Gallium Nitride Alloys Diluted with Arsenic and Containing High As Concentrations Grown by Metalorganic Vapor Phase Epitaxy”, the research involves growth of new materials using the MOVPE method and subsequent characterization of their properties.

The introduction of arsenic into gallium nitride (GaN) significantly affects its band structure, making this a promising approach to bandgap engineering. Such materials may find broad applications in advanced technologies based on group III nitrides, including optoelectronic and electronic devices.

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