Precision ICP-RIE etching using gases: Ar, O₂, SF₆, CF₄, CHF₃, C₄F₈, SiCl₄, BCl₃, Cl₂. Two separate reactors for etching: Si, SiO₂, SiO₂–TiO₂
b) III–V semiconductors (GaN, AlGaN)

Sentech SI 500 206, Sentech SI 500 207