Project funded by the National Science Centre under the “OPUS 15” call
Project number: 2018/29/B/ST3/02731
Total project value: 1,745,800.00 PLN
Total funding: 1,745,800.00 PLN
Project implementation period: 02/13/2019 – 02/10/2022
Project leader: Prof. Detlef Hommel
This research project focuses on the development of new semiconductor materials using molecular beam epitaxy. These materials are III-N(As) semiconductors with a small arsenic content, referred to as III-N(As) dilute arsenides. Since III-N semiconductors crystallize in the wurtzite structure and III-As semiconductors in the zinc-blende structure, we expect that combining these material systems will lead to compounds exhibiting unusual optical and electrical properties.
The objective of this project is to conduct systematic structural, optical, and electrical studies of III-N(As) compounds, as well as quantum wells and heterostructures incorporating these materials. These are fundamental studies aimed at understanding the physical properties of III-N(As) compounds and their heterostructures, which have not been fabricated before and may hold significant future potential for semiconductor devices such as short-wavelength light emitters or high-power transistors.
Since this technology is based on gallium-nitride compounds, which revolutionized the lighting industry (Nobel Prize in Physics 2014 – Prof. Isamu Akasaki, Prof. Hiroshi Amano, and Prof. Shuji Nakamura), we anticipate that the proposed research will be highly relevant to the further development of light emitters and high-temperature electronics. The applicant’s research group has recently demonstrated that arsenic incorporates into the GaN lattice as expected, confirming that the project’s goals are realistic.
