Project funded by the National Science Centre (NCN) under the “PRELUDIUM 24” call
Project No.: 2025/57/N/ST5/04650
Total project value: 138,531.00 PLN
Total funding: 138,531.00 PLN
Project leader: Kamila Nowak
The aim of the project “AlGaN:Mn – a Novel III-N Semiconductor for Next-Generation Electronics” is to develop new semiconductor materials based on AlₓGa₁₋ₓN diluted with manganese, which may find applications in electronic and spintronic devices. The success of the project will contribute to the development of semiconductors that combine electrical and magnetic properties within a single material.
The investigated structures will be fabricated using plasma-assisted molecular beam epitaxy (PA-MBE), a technique that enables precise control of composition and doping under conditions far from thermodynamic equilibrium, which is crucial for tailoring the material properties with high accuracy. The obtained layers will be subjected to comprehensive structural, optical, electrical, and magnetic characterization, allowing the determination of the influence of manganese on their properties.
The implementation of the project will enable a better understanding of the mechanisms responsible for the functionality of AlGaN:Mn and will lay the foundations for the development of new, multifunctional materials for next-generation electronics.
