Funded from the state budget
Targeted subsidy granted to institutions operating within the Łukasiewicz Research Network
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The planned outcome of this research project is the development of a technology for manufacturing structures composed of a nitride semiconductor (AlGaN) and a two-dimensional Van der Waals crystal.
Within the project, we propose to optimize Schottky diode structures consisting of a nitride semiconductor (AlGaN) on which multilayer structures of two-dimensional Van der Waals crystals (such as h-BN, WSe₂, MoS₂, etc.) will be deposited as the Schottky barrier. The properties of both two-dimensional materials and AlGaN semiconductors enable tuning of the Schottky junction parameters.
The results of the conducted research will enable the development of a method for creating hybrid Van der Waals crystal / nitride semiconductor structures, which may form the basis for an entire class of novel optoelectronic devices with tunable properties. The tunability of the junction properties of the two-dimensional Van der Waals crystal–AlGaN interface will be a key element of this project.
