Targeted grant awarded to institutions operating within the Łukasiewicz Research Network
Contract No.: 2/Ł-PORT/CŁ/2021
Project value: PLN 3,436,621.88
Funding amount: PLN 2,743,406.55
Project duration: 01/09/2021 – 31/08/2024
Project Manager: Associate Professor Damian Pucicki, PhD Eng.
The main goal of the project is to address the material and technological limitations that currently hinder further development of HEMT transistors fabricated epitaxially using a single growth technique. The application of a hybrid technology combining the advantages of MOVPE (Metalorganic Vapor Phase Epitaxy) and MBE (Molecular Beam Epitaxy) will enable the fabrication of transistor structures on template-type substrates with optimized design, thereby reducing parasitic effects that limit the performance capabilities of GaN-HEMT transistors.
