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Project

High-Performance AlGaN/GaN-HEMT Transistors Fabricated Using Hybrid MBE-MOVPE Technology – WYTRYCH

Targeted grant awarded to institutions operating within the Łukasiewicz Research Network

Contract No.: 2/Ł-PORT/CŁ/2021
Project value: PLN 3,436,621.88
Funding amount: PLN 2,743,406.55
Project duration: 01/09/2021 – 31/08/2024
Project Manager: Dr. hab. Damian Pucicki

The main goal of the project is to address the material and technological limitations that currently hinder further development of HEMT transistors fabricated epitaxially using a single growth technique. The application of a hybrid technology combining the advantages of MOVPE (Metalorganic Vapor Phase Epitaxy) and MBE (Molecular Beam Epitaxy) will enable the fabrication of transistor structures on template-type substrates with optimized design, thereby reducing parasitic effects that limit the performance capabilities of GaN-HEMT transistors.

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