Clean Room Laboratory

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Clean Room Laboratory

Fabrication of patterns in photoresist using a mask and a UV mercury lamp with a resolution of approx. 1 µm

SÜSS MicroTec Mask Aligner MA8/BA8

Fabrication of patterns in photoresist using maskless UV lithography (LED/DMD or laser) with a resolution of approx. 1 µm

Heidelberg Instruments µMLA Tabletop Maskless Aligner

Fabrication of microscale conductive silver traces

Fabrication of microscale conductive silver traces

Deposition of thin layers of materials such as metals (Cu, Ti, Ni, Au, etc.) and oxides (e.g., SiO₂)


Moorfield MiniLab 080

Atomic layer deposition of Al₂O₃, ZnO

Beneq TFS 200-312

Deposition of thin SiO₂, Si₃N₄ layers

Sentech SI 500 208

Precision ICP-RIE etching using gases: Ar, O₂, SF₆, CF₄, CHF₃, C₄F₈, SiCl₄, BCl₃, Cl₂. Two separate reactors for etching: Si, SiO₂, SiO₂–TiO₂
b) III–V semiconductors (GaN, AlGaN)

Sentech SI 500 206, Sentech SI 500 207

Microwave plasma O₂, CF₄, Ar

TePla GIGAbatch 310M, Diener Zepto

Height and surface roughness measurements

Bruker DektaXT

Height and surface roughness measurements

Bruker ContourGT


Measurement across the wide UV-VIS-NIR spectral range (190 nm to 3.5 µm). Determination of refractive index and thin-film thickness.

Sentech SE850 DUV

Substrate annealing using the RTP method at temperatures up to 1200°C

Annealsys AS-One 150

Annealing across a wide temperature range (up to 300°C)

Binder FD53, Binder FD56

Substrate annealing with high uniformity (±0.5°C below 120°C, ±1% above 120°C) and precision within the range up to 250°C

SÜSS HP8 Hot plates

Fabrication of thin material layers by spin coating (e.g., photoresist), with thickness dependent on spin speed.

SÜSS RCD8, Laurell WS-650, POLOS SPIN 150i

High-precision, high-resolution microscopic observation and sample measurements

Leica DM 4000, DM 8000, Keyence VHX-7000

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