Investigation of growth mechanisms and interface formation in h-BN/GaN heterostructures grown by MOVPE – BNGaN

The project involves a three-month research stay at the Pohang University of Science and Technology (POSTECH) in South Korea, focusing on the growth technology and properties of h-BN/GaN heterostructures deposited by metal-organic vapor phase epitaxy (MOVPE). The research aims to optimize the growth proces of h-BN layers on gallium nitride (GaN), investigate the quality of the heterointerface, and reduce defects arising from the integration of two-dimensional (2D) and three-dimensional (3D) materials.

The project includes advanced structural, optical, and electrical characterization of the deposited heterostructures using POSTECH’s state-of-the-art research infrastructure. The results will provide a better understanding of the relationship between growth conditions and material properties, laying the groundwork for the development of next-generation optoelectronic devices, including deep-ultraviolet (DUV) LEDs, photodetectors, and high-electron-mobility transistors (HEMTs).

The project extends the research carried out at the Łukasiewicz Research Network – PORT in the field of III-nitride semiconductor epitaxy and strengthens international scientific collaboration with one of the world’s leading research centers in this area.