Advanced Semiconductor Epitaxy Group

Epitaxy of group-III nitrides and their alloys. Focused on deep UV-emitter based on AlGaN and AlGaN/GaN electronic devices (HEMT).


Information/contact to the Leaders

Prof. Detlef Hommel, Ph.D., Senior Leader

Scientific degrees and titles:

1975   M.Sc. – Physics Dept. University of Warsaw (Poland)

1979   Ph.D. – Physics Dept. University of Warsaw

1989   Habilitation (Dr. sc. nat.) – Humboldt-University Berlin (GDR)

1994   University Professor (C4) – University of Bremen

2014   Leopoldyna Professor – Wroclaw University (Poland)

2016   Full Professor nominated by the Polish President

2018   Ordinary Professor – Wroclaw University


1979 – 1991  Central Institute of Electron Physics, Academy of Science, Berlin

1991 – 1994  Würzburg University, Dept. Exp. Physics III

1994 – 2014  University of Bremen, Faculty of Physics and Electrical Engineering, Head of Semiconductor Epitaxy

2014 –  present,  Wroclaw University, Faculty of Physics and Astronomy, Professor

2010 – present, Wroclaw Research Centre EIT+/ Łukasiewicz Research Network – PORT Polish Center of Technology Development


1997   Visiting Professor at Yamaguchi University (Japan)

2000   Visiting Professor at Chiba University (Japan)

2003 – 2009  Speaker of the DFG Research Group “Physics of nitride-based, nanostructured, light-emitting devices”, involving 6 professorial groups

2008 – 2011   Vice-director of the Virtual Institute “PINCH-Photonics” in frame of Helmholtz-Society at Research Center (FZ) Karlsruhe (Germany)

Chairman of important international conferences like:

– International II-VI Conference, Bremen, 2001

– International Conference on Nitride Semiconductors, Bremen, 2005

– International Workshop in Nitrides, Wroclaw, 2014

– Supervisor of 33 PhD (including 5 PhD currently) and over 40 M. Sc.

– author/co-author of over 650 scientific publications in international journals with more then 8.000 citations (excluding self-citations)


2006 – 2009   Alexander von Humboldt Research Fellow of the Foundation for Polish Science (FNP)

2014 – present, Member of the Academia Europaea

2019 – present, Chairman of the PORT Foundation


Ph.D., Robert Kudrawiec, Leader



Ph.D. Damian Pucicki (Łukasiewicz – PORT, Wrocław University of Science and Technology), head of epitaxy laboratory

Ph.D. Miłosz Grodzicki (Łukasiewicz – PORT, University of Wrocław), specialist of surface studies

Ph.D. Jarosław Serafińczuk (Łukasiewicz – PORT, Wrocław University of Science and Technology), high-resolution x-ray diffraction

Ph.D. Łukasz Janicki (Łukasiewicz – PORT), MBE-growth and optical characterization

M.Sc. Paulina Ciechanowicz, MBE-growth

M.Sc. Katarzyna Opolczyńska, processing of semiconductor structures

M.Sc. Karolina Moszak, MOVPE-growth

M.Sc. Wojciech Olszewski, MOVPE- and MBE-growth

M.Sc. Dominika Majchrzak, MBE-growth and surface studies

M.Sc. Anata Mgłosiek, technical support

Epitaxy and processing of wide bandgap semiconductors and their heterostructures.

Molecular Beam Epitaxy (MBE) cluster with two growth chambers and an interconnected analytical chamber equipped with XPS, UPS, AFM, and STM for in-situ measurements.

Metalorganic Vapour Phase Epitaxy (MOVPE) close showerhead reactor.

1. Marta Gladysiewicz, Mariusz Rudzinski, Detlef Hommel, Rober Kudrawiec. Emission and material gain spectra of polar compressive strained AlGaN quantum wells grown on virtual AlGaN substrates: Tuning emission wavelength and mixing TE and TM mode of light polarization. Semiconductor Science and Technology, 2018-05-30.

2. E. Zdanowicz, P. Ciechanowicz, K. Opolczyńska, D. Majchrzak, J.-G. Rousset, E. Piskorska-Hommel, M. Grodzicki, K. Komorowska, J. Serafinczuk, D. Hommel, R. Kudrawiec. As-related stability of the band gap temperature dependence in N-rich GaNAs . Applied Physics Letters, 2019-08-29.

3. M. Grodzicki, J.-G. Rousset, P. Ciechanowicz, E. Piskorska-Hommel, Detlef Hommel. XPS studies on the role of arsenic incorporated into Surface studies of physicochemical properties of As films on GaN(0001). Vacuum ScienceDirect, 2019-09-01.

4. D. Majchrzak, M. Grodzicki, P. Ciechanowicz, J.G. Rousset, E. Piskorska-Hommel and D. Hommel. The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001). ACTA PHYSICA POLONICA A, 2019-10-01. doi:10.12693/APhysPolA.136.585;

5. K. Moszak, W. Olszewski, D. Pucicki, J. Serafinczuk, K. Opołczyńska, M. Rudziński, R. Kudrawiec, D.Hommel. Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE. Journal of Applied Physics, 2019-10-25.

6. M. Grodzicki, J.-G. Rousset, P. Ciechanowicz, E. Piskorska-Hommel, Detlef Hommel. Surface studies of physicochemical properties of As films on GaN(0001). Applied Surface Science, 2019-11-01.

7. M. Gladysiewicz, R. Kudrawiec, D. Hommel. Material Gain Engineering in Staggered Polar AlGaN/AlN Quantum Wells Dedicated for Deep UV Lasers. IEEE Journal of Selected topics in Quantum Electronics, 2019-11-13. doi: 10.1109/JSTQE.2019.2950802 ;

8. E. Zdanowicz, D. Iida, L. Pawlaczyk, J. Serafinczuk, R. Szukiewic, R. Kudrawiec, D. Hommel and K. Ohkawa. Boron influence on bandgap and photoluminescence in BGaN grown on AlN. Journal of Applied Physics, 2020-04-29.

9. J. Serafinczuk, K. Moszak, Ł. Pawlaczyk, W. Olszewski, D. Pucicki, R. Kudrawiec, D. Hommel. Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample. Journal of Alloys and Compounds, 2020-06-05.

10. A. Filatova-Zalewska, Z. Litwicki, K. Moszak, W. Olszewski, K. Opołczyńska, D. Pucicki, J. Serafińczuk, D. Hommel, A. Jeżowski. Anisotropic thermal conductivity of AlGaN/GaN superlattices. Nanotechnology, 2020-11-26.

11. Robert Kudrawiec, and Detlef Hommel. Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters. Applied Physics Reviews, 2020-12-09. doi: 10.1063/5.0025371

12. M. Godzicki, K. Moszak, D. Hommel, G.R. Bell. Bistable Fermi level pinning and surface photovoltage in GaN. Applied Surface Science, 2020-12-15.

13. M. Grodzicki, D. Majchrzak, E. Zdanowicz, C. Bemjamin, P. Chiechanowicz, G.R. Bell, R. Kudrawiec, and D. Hommel, Vacuum. Band engineering in nitrogen-rich AlGaNAs quaternary alloys. Vacuum ScienceDirect, 2021-04-17.

14. M. Grodzicki,. Properties of Thin Film-Covered GaN(0001) Surfaces. Materials Proceedings,  2020-05-13.

15. Paulina Ciechanowicz, Sandeep Gorantla, Paweł P. Michałowski, Ewelina Zdanowicz, Jean-Guy Rousset, Dana Hlushchenko, Krzysztof Adamczyk, Dominika Majchrzak, Robert Kudrawiec, and Detlef Hommel. Arsenic-l nduced Growth of Dodecagonal GaN Microrods with Stable a-Piane Walls. Adyanced Optical Materials. doi: 10.1002/adom.202001348