Advanced Semiconductor Epitaxy Group
Epitaxy of group-III nitrides and their alloys. Focused on deep UV-emitter based on AlGaN and AlGaN/GaN electronic devices (HEMT).
Information/contact to the Leaders
detlef.hommel@port.lukasiewicz.gov.pl
robert.kudrawiec@port.lukasiewicz.gov.pl
Prof. Detlef Hommel, Ph.D., Senior Leader
Scientific degrees and titles:
1975 M.Sc. – Physics Dept. University of Warsaw (Poland)
1979 Ph.D. – Physics Dept. University of Warsaw
1989 Habilitation (Dr. sc. nat.) – Humboldt-University Berlin (GDR)
1994 University Professor (C4) – University of Bremen
2014 Leopoldyna Professor – Wroclaw University (Poland)
2016 Full Professor nominated by the Polish President
2018 Ordinary Professor – Wroclaw University
Employments:
1979 – 1991 Central Institute of Electron Physics, Academy of Science, Berlin
1991 – 1994 Würzburg University, Dept. Exp. Physics III
1994 – 2014 University of Bremen, Faculty of Physics and Electrical Engineering, Head of Semiconductor Epitaxy
2014 – present, Wroclaw University, Faculty of Physics and Astronomy, Professor
2010 – present, Wroclaw Research Centre EIT+/ Łukasiewicz Research Network – PORT Polish Center of Technology Development
Experiences:
1997 Visiting Professor at Yamaguchi University (Japan)
2000 Visiting Professor at Chiba University (Japan)
2003 – 2009 Speaker of the DFG Research Group “Physics of nitride-based, nanostructured, light-emitting devices”, involving 6 professorial groups
2008 – 2011 Vice-director of the Virtual Institute “PINCH-Photonics” in frame of Helmholtz-Society at Research Center (FZ) Karlsruhe (Germany)
Chairman of important international conferences like:
– International II-VI Conference, Bremen, 2001
– International Conference on Nitride Semiconductors, Bremen, 2005
– International Workshop in Nitrides, Wroclaw, 2014
– Supervisor of 33 PhD (including 5 PhD currently) and over 40 M. Sc.
– author/co-author of over 650 scientific publications in international journals with more then 8.000 citations (excluding self-citations)
Honors:
2006 – 2009 Alexander von Humboldt Research Fellow of the Foundation for Polish Science (FNP)
2014 – present, Member of the Academia Europaea
2019 – present, Chairman of the PORT Foundation
Ph.D., Robert Kudrawiec, Leader
TEAM
Ph.D. Damian Pucicki (Łukasiewicz – PORT, Wrocław University of Science and Technology), head of epitaxy laboratory
Ph.D. Miłosz Grodzicki (Łukasiewicz – PORT, University of Wrocław), specialist of surface studies
Ph.D. Jarosław Serafińczuk (Łukasiewicz – PORT, Wrocław University of Science and Technology), high-resolution x-ray diffraction
Ph.D. Łukasz Janicki (Łukasiewicz – PORT), MBE-growth and optical characterization
M.Sc. Paulina Ciechanowicz, MBE-growth
M.Sc. Katarzyna Opolczyńska, processing of semiconductor structures
M.Sc. Karolina Moszak, MOVPE-growth
M.Sc. Wojciech Olszewski, MOVPE- and MBE-growth
M.Sc. Dominika Majchrzak, MBE-growth and surface studies
M.Sc. Anata Mgłosiek, technical support
Epitaxy and processing of wide bandgap semiconductors and their heterostructures.
Molecular Beam Epitaxy (MBE) cluster with two growth chambers and an interconnected analytical chamber equipped with XPS, UPS, AFM, and STM for in-situ measurements.
Metalorganic Vapour Phase Epitaxy (MOVPE) close showerhead reactor.
1. Marta Gladysiewicz, Mariusz Rudzinski, Detlef Hommel, Rober Kudrawiec. Emission and material gain spectra of polar compressive strained AlGaN quantum wells grown on virtual AlGaN substrates: Tuning emission wavelength and mixing TE and TM mode of light polarization. Semiconductor Science and Technology, 2018-05-30. http://iopscience.iop.org/article/10.1088/1361-6641/aac2a3/meta
2. E. Zdanowicz, P. Ciechanowicz, K. Opolczyńska, D. Majchrzak, J.-G. Rousset, E. Piskorska-Hommel, M. Grodzicki, K. Komorowska, J. Serafinczuk, D. Hommel, R. Kudrawiec. As-related stability of the band gap temperature dependence in N-rich GaNAs . Applied Physics Letters, 2019-08-29. https://doi.org/10.1063/1.5110245
3. M. Grodzicki, J.-G. Rousset, P. Ciechanowicz, E. Piskorska-Hommel, Detlef Hommel. XPS studies on the role of arsenic incorporated into Surface studies of physicochemical properties of As films on GaN(0001). Vacuum ScienceDirect, 2019-09-01. https://doi.org/10.1016/j.vacuum.2019.05.043
4. D. Majchrzak, M. Grodzicki, P. Ciechanowicz, J.G. Rousset, E. Piskorska-Hommel and D. Hommel. The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001). ACTA PHYSICA POLONICA A, 2019-10-01. doi:10.12693/APhysPolA.136.585;
5. K. Moszak, W. Olszewski, D. Pucicki, J. Serafinczuk, K. Opołczyńska, M. Rudziński, R. Kudrawiec, D.Hommel. Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE. Journal of Applied Physics, 2019-10-25. https://aip.scitation.org/doi/10.1063/1.5100140
6. M. Grodzicki, J.-G. Rousset, P. Ciechanowicz, E. Piskorska-Hommel, Detlef Hommel. Surface studies of physicochemical properties of As films on GaN(0001). Applied Surface Science, 2019-11-01. https://doi.org/10.1016/j.apsusc.2019.07.006
7. M. Gladysiewicz, R. Kudrawiec, D. Hommel. Material Gain Engineering in Staggered Polar AlGaN/AlN Quantum Wells Dedicated for Deep UV Lasers. IEEE Journal of Selected topics in Quantum Electronics, 2019-11-13. doi: 10.1109/JSTQE.2019.2950802 ;
8. E. Zdanowicz, D. Iida, L. Pawlaczyk, J. Serafinczuk, R. Szukiewic, R. Kudrawiec, D. Hommel and K. Ohkawa. Boron influence on bandgap and photoluminescence in BGaN grown on AlN. Journal of Applied Physics, 2020-04-29. https://aip.scitation.org/doi/10.1063/1.5140413
9. J. Serafinczuk, K. Moszak, Ł. Pawlaczyk, W. Olszewski, D. Pucicki, R. Kudrawiec, D. Hommel. Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample. Journal of Alloys and Compounds, 2020-06-05. https://www.sciencedirect.com/science/article/pii/S0925838820302012?via%3Dihub
10. A. Filatova-Zalewska, Z. Litwicki, K. Moszak, W. Olszewski, K. Opołczyńska, D. Pucicki, J. Serafińczuk, D. Hommel, A. Jeżowski. Anisotropic thermal conductivity of AlGaN/GaN superlattices. Nanotechnology, 2020-11-26. https://iopscience.iop.org/article/10.1088/1361-6528/abc5f2/meta
11. Robert Kudrawiec, and Detlef Hommel. Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters. Applied Physics Reviews, 2020-12-09. doi: 10.1063/5.0025371
12. M. Godzicki, K. Moszak, D. Hommel, G.R. Bell. Bistable Fermi level pinning and surface photovoltage in GaN. Applied Surface Science, 2020-12-15. https://doi.org/10.1016/j.apsusc.2020.147416
13. M. Grodzicki, D. Majchrzak, E. Zdanowicz, C. Bemjamin, P. Chiechanowicz, G.R. Bell, R. Kudrawiec, and D. Hommel, Vacuum. Band engineering in nitrogen-rich AlGaNAs quaternary alloys. Vacuum ScienceDirect, 2021-04-17. https://doi.org/10.1016/j.vacuum.2021.110240
14. M. Grodzicki,. Properties of Thin Film-Covered GaN(0001) Surfaces. Materials Proceedings, 2020-05-13. https://doi.org/10.3390/CIWC2020-06833
15. Paulina Ciechanowicz, Sandeep Gorantla, Paweł P. Michałowski, Ewelina Zdanowicz, Jean-Guy Rousset, Dana Hlushchenko, Krzysztof Adamczyk, Dominika Majchrzak, Robert Kudrawiec, and Detlef Hommel. Arsenic-l nduced Growth of Dodecagonal GaN Microrods with Stable a-Piane Walls. Adyanced Optical Materials. doi: 10.1002/adom.202001348